Thissandier, F., Pauc, N., Brousse, T., Gentile, P. & Sadki, S. (2013) Micro-ultracapacitors with highly doped silicon nanowires electrodes. Nanoscale Res. Lett. 8 1–5.
Added by: Laurent Cournède (2016-03-10 21:23:31) |
Type de référence: Article DOI: 10.1186/1556-276X-8-38 Numéro d'identification (ISBN etc.): 1931-7573 Clé BibTeX: Thissandier2013a Voir tous les détails bibliographiques |
Catégories: ST2E Mots-clés: Carbon, Chemical vapor deposition, Cyclic voltammetry, devices, electrochemical capacitor, Electrochemical capacitors, Galvanostatic charge/discharge, growth, Microdevice, porous silicon, Silicon nanowires electrodes, supercapacitors, Ultracapacitor Créateurs: Brousse, Gentile, Pauc, Sadki, Thissandier Collection: Nanoscale Res. Lett. |
Consultations : 1/520
Indice de consultation : 3% Indice de popularité : 0.75% |
Résumé |
Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt4BF4 in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 mu Fcm(-2) by using 20 mu m SiNWs, i.e., a parts per thousand 10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm(-2).
Added by: Laurent Cournède |