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Thissandier, F., Pauc, N., Brousse, T., Gentile, P. & Sadki, S. (2013) Micro-ultracapacitors with highly doped silicon nanowires electrodes. Nanoscale Res. Lett. 8 1–5. 
Added by: Laurent Cournède (2016-03-10 21:23:31)
Type de référence: Article
DOI: 10.1186/1556-276X-8-38
Numéro d'identification (ISBN etc.): 1931-7573
Clé BibTeX: Thissandier2013a
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Catégories: ST2E
Mots-clés: Carbon, Chemical vapor deposition, Cyclic voltammetry, devices, electrochemical capacitor, Electrochemical capacitors, Galvanostatic charge/discharge, growth, Microdevice, porous silicon, Silicon nanowires electrodes, supercapacitors, Ultracapacitor
Créateurs: Brousse, Gentile, Pauc, Sadki, Thissandier
Collection: Nanoscale Res. Lett.
Consultations : 3/397
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt4BF4 in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 mu Fcm(-2) by using 20 mu m SiNWs, i.e., a parts per thousand 10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm(-2).
Added by: Laurent Cournède  
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