 |
 |
|
Dubost, V., Cren, T., Vaju, C., Cario, L., Corraze, B., Janod, E., Debontridder, F. & Roditchev, D. (2013) Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8. Nano Lett. 13 3648–3653.
Added by: Laurent Cournède (2016-03-10 21:23:30) |
| Type de référence: Article DOI: 10.1021/nl401510p Numéro d'identification (ISBN etc.): 1530-6984 Clé BibTeX: Dubost2013 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: electronic phase separation, memories, Mott memories, possible superconductivity, Resistive switches, stm, transition Créateurs: Cario, Corraze, Cren, Debontridder, Dubost, Janod, Roditchev, Vaju Collection: Nano Lett. |
Consultations : 4/527
Indice de consultation : 3% Indice de popularité : 0.75% |
| Résumé |
|
We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.
Added by: Laurent Cournède |