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Zazpe, R., Stoliar, P., Golmar, F., Llopis, R., Casanova, F. & Hueso, L. E. (2013) Resistive switching in rectifying interfaces of metal-semiconductor-metal structures. Appl. Phys. Lett. 103 073114.
Added by: Laurent Cournède (2016-03-10 21:23:30) |
| Type de référence: Article DOI: 10.1063/1.4818730 Numéro d'identification (ISBN etc.): 0003-6951 Clé BibTeX: Zazpe2013 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: memories, oxide Créateurs: Casanova, Golmar, Hueso, Llopis, Stoliar, Zazpe Collection: Appl. Phys. Lett. |
Consultations : 8/472
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| Résumé |
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We study the electrical characteristics of metal-semiconductor-metal HfO2-x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact. (C) 2013 AIP Publishing LLC.
Added by: Laurent Cournède |