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Zazpe, R., Stoliar, P., Golmar, F., Llopis, R., Casanova, F. & Hueso, L. E. (2013) Resistive switching in rectifying interfaces of metal-semiconductor-metal structures. Appl. Phys. Lett. 103 073114. 
Added by: Laurent Cournède (2016-03-10 21:23:30)
Type de référence: Article
DOI: 10.1063/1.4818730
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Zazpe2013
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Catégories: PMN
Mots-clés: memories, oxide
Créateurs: Casanova, Golmar, Hueso, Llopis, Stoliar, Zazpe
Collection: Appl. Phys. Lett.
Consultations : 1/349
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
We study the electrical characteristics of metal-semiconductor-metal HfO2-x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact. (C) 2013 AIP Publishing LLC.
Added by: Laurent Cournède  
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