Jun-feng, H., Cheng, L., Tao, J., Hua-mu, X., Kui, Z. & Besland, M. .-P. (2013) An optimized In-CuGa metallic precursors for chalcopyrite thin films. Thin Solid Films, 545 251–256.
Added by: Laurent Cournède (2016-03-10 21:23:29)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Junfeng2013
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Mots-clés: Alloying, cigs, Copper Indium Gallium Selenide, cuinse2, indium, layer, performance, Precursor films, pv modules, scale, Scanning electron microscopy, se vapor, selenization, solar-cells, Sputtering, X-ray diffraction
Créateurs: Besland, Cheng, Hua-mu, Jun-feng, Kui, Tao
Collection: Thin Solid Films
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We report a study of CuGa-In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 degrees C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 degrees C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. (C) 2013 Elsevier B. V. All rights reserved.
Added by: Laurent Cournède