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Gaucher, A., Baylet, J., Rothman, J., Martinez, E. & Cardinaud, C. (2013) Characterization of Plasma Etching Process Damage in HgCdTe. J. Electron. Mater. 42 3006–3014. 
Added by: Laurent Cournède (2016-03-10 21:23:29)
Type de référence: Article
DOI: 10.1007/s11664-013-2654-4
Numéro d'identification (ISBN etc.): 0361-5235
Clé BibTeX: Gaucher2013
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Catégories: PCM
Mots-clés: ar, Auger electron spectroscopy, cdxhg1-xte, conversion, detectors, etched sidewalls, hg1-xcdxte, HgCdTe, inductively coupled plasma (ICP), mercury cadmium telluride, minority-carrier lifetime, surfaces
Créateurs: Baylet, Cardinaud, Gaucher, Martinez, Rothman
Collection: J. Electron. Mater.
Consultations : 5/403
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Microstructural and electrical damage to n-type long-wavelength infrared Hg1-x Cd (x) Te (MCT) following CH4-H-2-based inductively coupled plasma etching has been investigated. While the damage from such etching processes to MCT has previously been characterized for planar full-wafer etching, in this communication we present the results of an investigation of the damage incurred to etched sidewalls, whose faces constitute the majority of the etched surface in novel architectures. Auger electron spectroscopy was used to monitor the evolution of X (Cd) beneath etched surfaces. So far, no X (Cd) evolution has been detected underneath etched surfaces within a Delta X (Cd) = 0.02 resolution. Conductivity and minority-carrier lifetime have been studied on patterned photoconductors, from which it is possible to extract a surface recombination velocity (SRV). These studies have shown surface conductivity variations and SRV shifts of several orders of magnitude, depending on the etching process used.
Added by: Laurent Cournède  
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