Han, J.-F., Liao, C., Jiang, T. & Xie, H.-M. (2013) Investigation of chalcopyrite film growth: an evolution of thin film morphology and structure during selenization. J. Mater. Sci.-Mater. Electron. 24 4636–4642.
Added by: Laurent Cournède (2016-03-10 21:23:29)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0957-4522
Clé BibTeX: Han2013a
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Mots-clés: absorbers, cigs films, cuinse2, post-selenization, precursor, se vapor, solar-cells, target
Créateurs: Han, Jiang, Liao, Xie
Collection: J. Mater. Sci.-Mater. Electron.
Consultations : 1/424
Indice de consultation : 2%
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In this work, we report a study of the evolution of Cu-In-Ga-Se system during selenization. The metallic precursors were selenized in Se vapour atmosphere at temperature range from 210 to 380 A degrees C. Scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectra were used to investigate morphological and structural properties of the films. A great amount of thin platelets appeared in the film surfaces at temperature range from 210 to 270 A degrees C. Most platelets had hexagon or polygon structures. The average sizes of these platelets increased with the temperatures. TEM analyses indicated that these platelets had gamma-CuSe phases. Beyond 310 A degrees C, most of CuSe platelets decomposed under release of selenium and formed Cu2-xSe. Cu2-xSe might react with InSe for the formation of tetragonal CuInSe2. The average grain sizes increased obviously with the increased temperatures. A possible reaction path to obtain a chalcopyrite structural film was discussed in the end. In addition, Ga was detected rich in the bottom of the film by energy dispersive spectroscopy and grazing incidence X-ray diffraction.
Added by: Laurent Cournède