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Belmahi, M., Bulou, S., Thouvenin, A., de Poucques, L., Hugon, R., Le Brizoual, L., Miska, P., Geneve, D., Vasseur, J.-L. & Bougdira, J. (2014) Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H-2/N-2/Ar/Hexamethyldisilazane Gas Mixture. Plasma Process. Polym. 11 551–558.
Added by: Laurent Cournède (2016-03-10 21:01:56) |
| Type de référence: Article DOI: 10.1002/ppap.201300166 Numéro d'identification (ISBN etc.): 1612-8850 Clé BibTeX: Belmahi2014 Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: (dimethylamino)dimethylsilane precursor, c-n films, chemical composition, chemical-vapor-deposition, h films, microwave plasma assisted chemical vapour deposition, nitride, optical constants, optical-properties, organosilicon compound, SiCN thin films, sicxny films, silicon carbonitride films, surface passivation, tetramethyldisilazane source Créateurs: Belmahi, Bougdira, Bulou, Geneve, Hugon, Le Brizoual, Miska, de Poucques, Thouvenin, Vasseur Collection: Plasma Process. Polym. |
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SiCxNy:H thin films are obtained with the microwave plasma assisted chemical vapour deposition (MPACVD) method in the gas mixture H2/Ar/Hexamethyldisilazane. When very few amounts of nitrogen are added to the gas mixture, the film composition changes drastically from SiCx:H like films to SiNx:H like films, according to X-rays Photoelectron Spectroscopy and Fourier Transform Infra-Red Spectroscopy (FTIR) analysis. The refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75n2.15 and 3.5eVEg5eV) with nitrogen addition to the feed gas leading to thin films optical constants close to those of SiC or Si3N4. Therefore, for the films obtained without nitrogen, SiC nanoparticles with a size of about 20nm embedded in an amorphous SiCN:H matrix are synthesized, leading to nanocomposite films.
Added by: Laurent Cournède |