IMN

Biblio. IMN

Référence en vue solo

Nguyen, D. T., Ferrec, A., Keraudy, J., Richard-Plouet, M., Goullet, A., Cattin, L., Brohan, L. & Jouan, P. .-Y. (2014) Ellipsometric and XPS characterization of transparent nickel oxide thin films deposited by reactive HiPIMS. Surf. Coat. Technol. 250 21–25. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1016/j.surfcoat.2014.02.014
Numéro d'identification (ISBN etc.): 0257-8972
Clé BibTeX: Nguyen2014b
Voir tous les détails bibliographiques
Catégories: CESES, PCM
Mots-clés: Ellipsometry, Nickel oxide, nio, p-Type semi-conductor, Reactive HiPIMS, X-ray photoelectron spectroscopy
Créateurs: Brohan, Cattin, Ferrec, Goullet, Jouan, Keraudy, Nguyen, Richard-Plouet
Collection: Surf. Coat. Technol.
Consultations : 1/613
Indice de consultation : 4%
Indice de popularité : 1%
Résumé     
We have deposited transparent p-type semiconductive NiO thin films by reactive HiPIMS which appeared to be a powerful method to produce thin films exhibiting gradients of chemical compositions and opto-electronic properties. For a fixed amount of oxygen in the discharge (9\%), the influence of the pulse duration was investigated. The position of the valence band with respect to the Fermi level was evaluated by X-ray Photoelectron Spectroscopy (XPS), for two different pulse durations, 15 and 30 mu s. We have then investigated the dependence of optical properties of NiO films using spectroscopic ellipsometry (1.5-5.0 eV range). Refractive index n, extinction coefficient k, and gap energy of the NiO films were determined with a refractive index gradient decreasing along the film growth direction. (C) 2014 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2877 | Requêtes métadonnées : 58 | Exécution de script : 0.13236 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale