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Lombez, L., Soro, M., Delamarre, A., Naghavi, N., Barreau, N., Lincot, D. & Guillemoles, J. .-F. (2014) Revisiting the interpretation of biased luminescence: Effects on Cu(In,Ga)Se-2 photovoltaic heterostructures. J. Appl. Phys. 116 064504. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1063/1.4891525
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: Lombez2014
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Catégories: CESES, INTERNATIONAL
Mots-clés: high-efficiency, photoluminescence, solar-cells, thin-films
Créateurs: Barreau, Delamarre, Guillemoles, Lincot, Lombez, Naghavi, Soro
Collection: J. Appl. Phys.
Consultations : 8/429
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
We analyzed the luminescence signal under electrical bias (Lum-V) for several Cu(In,Ga)Se-2 solar cells having different absorber growth processes and different buffer layers such as CdS and ZnS. A numerical model is developed taking into account optical and electrical properties of the complete heterostructures. It appears that the absorber-buffer interface has a crucial role in explaining the different behaviors. Our interpretation is based on the quasi Fermi level splitting (QFL) linked to both the applied voltage and the luminescence intensity. Lum-V experiments and its dependence on illumination intensity are discussed and could be used to access transport properties when looking at the depth variation of the QFL and offer a classification of the possible cases. (C) 2014 AIP Publishing LLC.
Added by: Laurent Cournède  
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