Phuoc, T. V., Brouet, V., Corraze, B., Janod, E., Zaghrioui, M. & Cario, L. (2014) Relation between Thermally Induced Structural Distortions and Electronic Properties of the Layered Misfit Chalcogenide (LaS)(1.196)VS2. J. Phys. Chem. C, 118 19273–19279.
Added by: Laurent Cournède (2016-03-10 21:01:55)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 1932-7447
Clé BibTeX: Phuoc2014
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Mots-clés: breakdown, dependence, gap mott insulators, magnetic-field, metal-insulator transitions, model, optical conductivity, plane, systems, temperature
Créateurs: Brouet, Cario, Corraze, Janod, Phuoc, Zaghrioui
Collection: J. Phys. Chem. C
Consultations : 3/481
Indice de consultation : 3%
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Interplay between electronic and structural properties of the misfit layered chalcogenide (LaS)(1.196)VS2 crystals was investigated by transport, optical measurements, angle-resolved photoemission (ARPES), Raman spectroscopy, and X-ray diffraction. Although no clear anomaly is found in temperature-dependent transport measurements, a large spectral weight transfer, around 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals a nearly filled band with negative curvature, close enough from the Fermi level at room temperature to produce metallic-like behavior as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with an optical gap of 120 meV. Both Raman spectroscopy and accurate (3 + 1)D analysis of X-ray diffraction data show that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distortion plays a major role in the insulating nature of (LaS)(1.196)VS2 and that electronic correlation may not be important, contrary to previous beliefs.
Added by: Laurent Cournède