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Ton-That, C., Lem, L. L. C., Phillips, M. R., Reisdorffer, F., Mevellec, J., Nguyen, T. .-P., Nenstiel, C. & Hoffmann, A. (2014) Shallow carrier traps in hydrothermal ZnO crystals. New J. Phys. 16 083040. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1088/1367-2630/16/8/083040
Numéro d'identification (ISBN etc.): 1367-2630
Clé BibTeX: TonThat2014
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Catégories: PMN
Mots-clés: bound exciton, cathodoluminescence, dlts, hydrogen, level transient spectroscopy, Luminescence, single-crystal, ZnO
Créateurs: Hoffmann, Lem, Mevellec, Nenstiel, Nguyen, Phillips, Reisdorffer, Ton-That
Collection: New J. Phys.
Consultations : 1/539
Indice de consultation : 4%
Indice de popularité : 1%
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO.
Added by: Laurent Cournède  
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