IMN

Biblio. IMN

Référence en vue solo

Nguyen, D. T., Ferrec, A., Keraudy, J., Bernede, J. C., Stephant, N., Cattin, L. & Jouan, P. .-Y. (2014) Effect of the deposition conditions of NiO anode buffer layers in organic solar cells, on the properties of these cells. Appl. Surf. Sci. 311 110–116. 
Added by: Laurent Cournède (2016-03-10 21:01:55)
Type de référence: Article
DOI: 10.1016/j.apsusc.2014.05.020
Numéro d'identification (ISBN etc.): 0169-4332
Clé BibTeX: Nguyen2014a
Voir tous les détails bibliographiques
Catégories: CESES, PCM
Mots-clés: annealing, Anode buffer layer, DC reactive sputtering, devices, diodes, discharge, efficiency, Forming process, nickel-oxide, NiO thin films, Organic photovoltaic cells, performance, photovoltaic cells, target, thin-films, voltage
Créateurs: Bernede, Cattin, Ferrec, Jouan, Keraudy, Nguyen, Stephant
Collection: Appl. Surf. Sci.
Consultations : 9/483
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
NiO thin films deposited by DC reactive sputtering were used as anode buffer layer in organic photovoltaic cells (OPVs) based on CuPc/C-60 planar heterojunctions. Firstly we show that the properties of the NiO films depend on the 02 partial pressure during deposition. The films are first conductive between 0 and 2\% partial oxygen pressure, then they are semiconductor and p-type between 2 and 6\% partial oxygen pressure, between 6 and 9\% partial oxygen pressure the conduction is very low and the films seem to ben-type and finally, for a partial oxygen pressure higher than 9\%, the conduction is p-type. The morphology of these films depends also on the O-2 partial pressure. When the NiO films is thick of 4 nm, its peak to valley roughness is 6 nm, when it is sputtered with a gas containing 7.4\% of oxygen, while it is more than double, 13.5 nm, when the partial pressure of oxygen is 16.67\%. This roughness implies that a forming process, i.e. a decrease of the leakage current, is necessary for the OPVs. The forming process is not necessary if the NiO ABL is thick of 20 nm. In that case it is shown that optimum conversion efficiency is achieved with NiO ABL annealed 10 min at 400 degrees C. (C) 2014 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2608 | Requêtes métadonnées : 70 | Exécution de script : 0.12274 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale