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Aissa, A. K., Semmar, N., Achour, A., Simon, Q., Petit, A., Camus, J., Boulmer-Leborgne, C. & Djouadi, M. A. (2014) Achieving high thermal conductivity from AlN films deposited by high-power impulse magnetron sputtering. J. Phys. D-Appl. Phys. 47 355303.
Added by: Laurent Cournède (2016-03-10 21:01:55) |
| Type de référence: Article DOI: 10.1088/0022-3727/47/35/355303 Numéro d'identification (ISBN etc.): 0022-3727 Clé BibTeX: Aissa2014 Voir tous les détails bibliographiques  |
Catégories: ID2M Mots-clés: aluminum nitride, devices, gan, HiPIMS, pulsed photo-thermal technique, temperature, Thermal conductivity, thin-films Créateurs: Achour, Aissa, Boulmer-Leborgne, Camus, Djouadi, Petit, Semmar, Simon Collection: J. Phys. D-Appl. Phys. |
Consultations : 1/1440
Indice de consultation : 10% Indice de popularité : 2.5% |
| Résumé |
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We report on thermal conductivity measurements of aluminum nitride (AlN) films using the fast pulsed photo-thermal technique. The films were deposited by high-power impulse magnetron sputtering with different thicknesses ranging from 1000 to 8000 nm on (1 0 0) oriented silicon substrates. The films were characterized by x-ray diffraction (XRD), Raman spectroscopy, profilometry, scanning electron microscopy and atomic force microscopy. The XRD measurements showed that AlN films were textured along the (0 0 2) direction. Moreover, x-ray rocking curve measurements indicated that the crystalline quality of AlN was improved with the increase in film thickness. The thermal conductivities of the samples were found to rapidly increase when the film thickness increased up to 3300 nm and then showed a tendency to remain constant. A thermal boundary resistance as low as 8x10(-9) W-1 K m(2) and a thermal conductivity as high as 250 +/- 50 W K-1 m(-1) were obtained for the AlN films, at room temperature. This high thermal conductivity value is close to that of an AlN single crystal and highlights the potential of these films as a dielectric material for thermal management.
Added by: Laurent Cournède |