Girard, A., Coulon, N., Cardinaud, C., Mohammed-Brahim, T. & Geneste, F. (2014) Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts. Appl. Surf. Sci. 314 358–366.
Added by: Laurent Cournède (2016-03-10 21:01:55)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0169-4332
Clé BibTeX: Girard2014
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Mots-clés: aryl groups, carbon surface, cmos technology, Crystallinity, devices, Diazonium salt, Doping, electrochemical reduction, functionalization, immobilization, organic monolayers, Polycrystalline silicon, ray photoelectron-spectroscopy, Spontaneous grafting, thin-film transistors, XPS
Créateurs: Cardinaud, Coulon, Geneste, Girard, Mohammed-Brahim
Collection: Appl. Surf. Sci.
Consultations : 9/912
Indice de consultation : 3%
Indice de popularité : 0.75%
The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O-2 plasma etching with AFM measurement. Structural characteristics of the polySi films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species. (C) 2014 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède