Achour, A., Soussou, M. A., Aissa, A. K., Islam, M., Barreau, N., Faulques, E., Le Brizoual, L., Djouadi, M. A. & Boujtita, M. (2014) Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization. Thin Solid Films, 571 168–174.
Added by: Laurent Cournède (2016-03-10 21:01:54)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Achour2014
Voir tous les détails bibliographiques
|Catégories: CESES, ID2M, INTERNATIONAL, MIOPS
Mots-clés: Anodic oxidation, aqueous-electrolytes, Band gap emission, buffer layer, carbon nanotubes, dissolution, low-temperature, photoluminescence, spectroscopy, thin films, thin-films, XPS, Zinc oxide, zinc-oxide
Créateurs: Achour, Aissa, Barreau, Boujtita, Djouadi, Faulques, Islam, Le Brizoual, Soussou
Collection: Thin Solid Films
Consultations : 5/729
Indice de consultation : 4%
Indice de popularité : 1%
We report fabrication of nanostructured zinc oxide (ZnO) thin films with improved optical properties through electrochemical anodization. The ZnO filmswere produced over silicon substrates via radio-frequency (RF) plasma magnetron sputtering technique followed by electrochemical treatment in potassium sulfate solution. After electrochemical treatment, the effect of applied potential on the band gap emission behavior of ZnO films was investigated for the potential drop of 1.8, 2.4 and 3.0 V against reference electrode of Ag/AgCl/0.1MKCl. Depending on these values, ZnO films with different degrees of nonporous morphology, improved structural quality and oxygen-rich surface chemistrywere obtained. The treatment also resulted in enhancement of band gap emission from ZnO films with the degree of enhancement depending on the applied potential. As compared to the asdeposited films, a maximum increase in the photoemission intensity by more than 2.2 times was noticed. In this paper, any changes in the structure, surface chemistry and band gap emission intensity of the RF sputter deposited films, as induced by the anodization treatment at differential potential values, are discussed. (C) 2014 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède