Han, J.-F., Liao, C., Cha, L.-M., Jiang, T., Xie, H.-M., Zhao, K. & Besland, M. .-P. (2014) TEM and XPS studies on CdS/CIGS interfaces. J. Phys. Chem. Solids, 75 1279–1283.
Added by: Laurent Cournède (2016-03-10 21:01:54)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0022-3697
Clé BibTeX: Han2014a
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Mots-clés: cbd, Chalcogenides, Electron microscopy, film solar-cells, growth, interfaces, Photoelectron spectroscopy, thin films
Créateurs: Besland, Cha, Han, Jiang, Liao, Xie, Zhao
Collection: J. Phys. Chem. Solids
Consultations : 4/500
Indice de consultation : 2%
Indice de popularité : 0.5%
Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations. (C) 2014 Elsevier Ltd. All rights reserved.
Added by: Laurent Cournède