IMN

Biblio. IMN

Référence en vue solo

Belkerk, B. E., Bensalem, S., Soussou, A., Carette, M., Al Brithen, H., Djouadi, M. A. & Scudeller, Y. (2014) Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature. Appl. Phys. Lett. 105 221905. 
Added by: Laurent Cournède (2016-03-10 21:01:54)
Type de référence: Article
DOI: 10.1063/1.4903220
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: Belkerk2014
Voir tous les détails bibliographiques
Catégories: ID2M
Mots-clés: aln, deposition, silicon, surface passivation
Créateurs: Al Brithen, Belkerk, Bensalem, Carette, Djouadi, Scudeller, Soussou
Collection: Appl. Phys. Lett.
Consultations : 5/504
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature ({<}200 degrees C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 x 10(-9) Km(2)W(-1) on SiN against 3.5 x 10(-9) Km(2) W-1 on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm(-1) K-1 whatever the substrate. (c) 2014 AIP Publishing LLC.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2608 | Requêtes métadonnées : 57 | Exécution de script : 0.11435 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale