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Hamdi, M., Louati, B., Lafond, A., Guillot-Deudon, C., Chrif, B., Khirouni, K., Gargouri, M., Jobic, S. & Hlel, F. (2015) Structural and electrical properties of Cu2Zn(Sn1−xSix)S4 (x = 0, x = 0.5) materials for photovoltaic applications. J. Alloy. Compd. 620 434–441. 
Added by: Richard Baschera (2016-03-10 18:36:42)   Last edited by: Richard Baschera (2020-01-22 15:02:45)
Type de référence: Article
DOI: 10.1016/j.jallcom.2014.09.054
Numéro d'identification (ISBN etc.): 0925-8388
Clé BibTeX: Hamdi2015a
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Catégories: MIOPS
Mots-clés: band gap, behavior, compound, conduction, cu2znsns4 thin-films, czts, Electrical conductivity, Impedance, Semiconductor, semiconductors, solar-cells, spectroscopy, temperature
Créateurs: Chrif, Gargouri, Guillot-Deudon, Hamdi, Hlel, Jobic, Khirouni, Lafond, Louati
Collection: J. Alloy. Compd.
Consultations : 13/489
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
This work studied the electrical effects of the substitution of tin with silicon on p-type Cu2ZnSnS4 semiconductor compounds. To this purpose, two samples, namely Cu2ZnSnS4 and Cu2ZnSn0.5Si0.5S4, were prepared. The samples purities and homogeneities were characterized by both Energy Dispersive X-ray (EDX) spectroscopy and powder X-ray diffraction (PXRD). We observed that the temperature dependence of the electrical conductivity of materials exhibits a crossover from T (1/4) to T (1) dependence in the temperature range between 130 and 140 K. The characteristic temperature (T-0,T-Mott), the hopping distance (R-hop), the average hopping energy (Delta(hop)), the localization length (xi) and the density of states (N(E-F)), were determined, and their values were discussed within the models describing conductivity in p-type semiconductor. (C) 2014 Elsevier B.V. All rights reserved.
  
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