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Tranchant, J., Janod, E., Corraze, B., Stoliar, P., Rozenberg, M., Besland, M.-P. & Cario, L. (2015) Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications. Phys. Status Solidi A-Appl. Mat. 212 239–244. 
Added by: Richard Baschera (2016-03-10 18:36:42)   Last edited by: Richard Baschera (2020-04-07 14:51:37)
Type de référence: Article
DOI: 10.1002/pssa.201400158
Numéro d'identification (ISBN etc.): 1862-6300
Clé BibTeX: Tranchant2015
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Mots-clés: memories, memristor, Mott insulator, resistive switching, rram, systems, transition
Créateurs: Besland, Cario, Corraze, Janod, Rozenberg, Stoliar, Tranchant
Collection: Phys. Status Solidi A-Appl. Mat.
Consultations : 1/646
Indice de consultation : 4%
Indice de popularité : 1%
The AM(4)Q(8) family of chalcogenide Mott insulator compounds exhibit an electric pulse induced resistive switching that could be used in data storage applications as Mott memories. Depending on the applied electric field, this transition is either volatile or non-volatile. This study demonstrates that the theory established for the volatile transition can be used to understand the non-volatile transition. It leads to propose a simple model for the SET and RESET transitions. In addition, we show that the alternation of short high voltage multi-pulses with long low voltage single pulses enables to control the non-volatile resistive switching and to achieve multi-level switching. This memristive property opens the way to the use in neuromorphic applications of this new type of resistive switching inherent to Mott insulators.
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