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Stoliar, P., Diener, P., Tranchant, J., Corraze, B., Briere, B., Ta-Phuoc, V., Bellec, N., Fourmigue, M., Lorcy, D., Janod, E. & Cario, L. (2015) Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator. J. Phys. Chem. C, 119 2983–2988.
Added by: Laurent Cournède (2016-03-10 18:36:42) |
| Type de référence: Article DOI: 10.1021/jp512810e Numéro d'identification (ISBN etc.): 1932-7447 Clé BibTeX: Stoliar2015 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: avalanche breakdown, bistability, devices, dithiolene complexes, field, gata4se8, gold complexes, organic nonvolatile memory, thin-film, transition Créateurs: Bellec, Briere, Cario, Corraze, Diener, Fourmigue, Janod, Lorcy, Stoliar, Ta-Phuoc, Tranchant Collection: J. Phys. Chem. C |
Consultations : 2/521
Indice de consultation : 3% Indice de popularité : 0.75% |
| Résumé |
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Resistive random-access memory (ReRAM) made of organic materials has recently received much attention for application in flexible devices. In the latter, resistive switching is usually obtained thanks to electrochemical effects or charge trapping. This work shows that, under electric pulses, the crystalline molecular Mott insulator [Au(Et-thiazdt)(2)] exhibits a resistive switching based on an insulator-to-metal transition (IMT). Electric pulses exceeding a threshold electric field of a few kilovolts/centimeter induce a volatile transition, due to an intrinsic, purely electronic effect related to an avalanche phenomenon. Moreover, the application of electric pulses of higher amplitude induces a nonvolatile and reversible resistive switching. Both two-level and multilevel switching between resistances R-on and R-off are observed. At room temperature, a R-off/R-on ratio {>}100 is obtained, which is very high for this kind of switching mechanism and quite promising for ReRAM applications. [Au(Et-thiazdt)(2)] appears as the first molecular member of a new class of ReRAM called Mott memories.
Added by: Laurent Cournède |