IMN

Biblio. IMN

Référence en vue solo

Buffiere, M., El Mel, A.-A., Lenaers, N., Brammertz, G., Zaghi, A. E., Meuris, M. & Poortmans, J. (2015) Surface Cleaning and Passivation Using (NH4)(2)S Treatment for Cu(In,Ga)Se-2 Solar Cells: A Safe Alternative to KCN. Adv. Energy Mater. 5 1401689. 
Added by: Laurent Cournède (2016-03-10 18:36:42)
Type de référence: Article
DOI: 10.1002/aenm.201401689
Numéro d'identification (ISBN etc.): 1614-6832
Clé BibTeX: Buffiere2015b
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: alternative selective etchants, chemical etching, electronic-properties, ga)se-2, performance, polycrystalline cu(in, secondary phases, semiconductors, Solar cells, thin films, thin-films, x-ray photoelectron
Créateurs: Brammertz, Buffiere, El Mel, Lenaers, Meuris, Poortmans, Zaghi
Collection: Adv. Energy Mater.
Consultations : 2/696
Indice de consultation : 4%
Indice de popularité : 1%
Résumé     
With the aim of developing a safe alternative to the KCN etchant for the removal of CuxSe secondary phases at the surface of Cu(In,Ga)Se-2 (CIGSe) absorber, a method based on ammonium sulfide (AS) chemical treatment is proposed. Although lower etching rates are observed compared with the KCN reference solution, the AS solution is found to selectively etch CuxSe phases. In addition, it allows modifying the surface chemical state of the CIGSe absorber by incorporation of sulfur. As a consequence, the minority carrier lifetime located close to the surface of the absorber is found to be improved. Furthermore, it is demonstrated that optimizing the AS treatment time induces a remarkable enhancement in the electrical performances of the CIGSe-based solar cells.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2699 | Requêtes métadonnées : 65 | Exécution de script : 0.11754 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale