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Antoun, G., Tillocher, T., Girard, A., Lefaucheux, P., Faguet, J., Kim, H., Zhang, D., Wang, M., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O-2 and Ar plasmas. Journal of Vacuum Science & Technology A, 40. 
Added by: Richard Baschera (2022-10-17 15:17:55)   Last edited by: Richard Baschera (2022-10-17 15:19:39)
Type de référence: Article
DOI: 10.1116/6.0001885
Numéro d'identification (ISBN etc.): 0734-2101
Clé BibTeX: Antoun2022a
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Catégories: INTERNATIONAL, PCM
Créateurs: Antoun, Cardinaud, Dussart, Faguet, Girard, Kim, Lefaucheux, Maekawa, Tillocher, Wang, Zhang
Collection: Journal of Vacuum Science & Technology A
Consultations : 4/109
Indice de consultation : 14%
Indice de popularité : 3.5%
Résumé     
This article first presents quasi-in situ XPS measurements on Si3N4 and a-Si samples after exposure to an SiF4/O-2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at -65 degrees C, which has led to the development of a time-multiplexed process for nanoscale etching. This study clearly shows the possibility to switch from a deposition regime to an etching regime by decreasing the temperature. The threshold temperature between these regimes being different for both materials, it was possible to perform selective etching of Si3N4 over a-Si by wisely choosing the temperature. Published under an exclusive license by the AVS.
  
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