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Antoun, G., Girard, A., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process. ECS J. Solid State Sci. Technol. 11 013013. 
Added by: Richard Baschera (2022-02-10 16:55:34)   Last edited by: Richard Baschera (2022-02-10 17:00:11)
Type de référence: Article
DOI: 10.1149/2162-8777/ac4c7d
Numéro d'identification (ISBN etc.): 2162-8777
Clé BibTeX: Antoun2022
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Catégories: INTERNATIONAL, PCM
Créateurs: Antoun, Cardinaud, Dussart, Faguet, Girard, Lefaucheux, Maekawa, Tillocher
Collection: ECS J. Solid State Sci. Technol.
Consultations : 5/210
Indice de consultation : 11%
Indice de popularité : 2.75%
Liens URLs     https://doi.org/10.1149/2162-8777/ac4c7d
Résumé     
A silicon oxyfluoride layer was deposited on a-Si samples using SiF4/O2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiFx species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
  
Notes     
Publisher: The Electrochemical Society
  
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