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Antoun, G., Girard, A., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process. ECS J. Solid State Sci. Technol. 11 013013.
Added by: Richard Baschera (2022-02-10 16:55:34) Last edited by: Richard Baschera (2022-02-10 17:00:11) |
| Type de référence: Article DOI: 10.1149/2162-8777/ac4c7d Numéro d'identification (ISBN etc.): 2162-8777 Clé BibTeX: Antoun2022 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM Créateurs: Antoun, Cardinaud, Dussart, Faguet, Girard, Lefaucheux, Maekawa, Tillocher Collection: ECS J. Solid State Sci. Technol. |
Consultations : 1/502
Indice de consultation : 12% Indice de popularité : 3% |
| Liens URLs https://doi.org/10.1149/2162-8777/ac4c7d |
| Résumé |
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A silicon oxyfluoride layer was deposited on a-Si samples using SiF4/O2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiFx species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
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Publisher: The Electrochemical Society
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