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Belfore, B., Poudel, D., Karki, S., Soltanmohammad, S., Palmiotti, E., Lepetit, T., Rockett, A. & Marsillac, S. (2021) Recrystallization of Cu(In,Ga)Se-2 Semiconductor Thin Films via InCl3 Treatment. Thin Solid Films, 735 138897. 
Added by: Richard Baschera (2021-10-28 08:00:17)   Last edited by: Richard Baschera (2021-10-28 08:04:37)
Type de référence: Article
DOI: 10.1016/j.tsf.2021.138897
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Belfore2021b
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Catégories: INTERNATIONAL, MIOPS
Mots-clés: Copper Indium Gallium Selenide, Post Deposition Treatment, Recrystallization, Solar cell, thin films
Créateurs: Belfore, Karki, Lepetit, Marsillac, Palmiotti, Poudel, Rockett, Soltanmohammad
Collection: Thin Solid Films
Consultations : 12/136
Indice de consultation : 8%
Indice de popularité : 2%
Liens URLs     https://www.scienc ... /S0040609021003801
Résumé     
One of the key challenges to promote the economic viability of Cu(In,Ga)Se2 (CIGS) solar cells is the multi-stage co-evaporation process required to make a high quality absorber layer. One phenomenon of interest is dynamic recrystallization using a fluxing agent. While these techniques have significantly improved material systems like CdTe, their impact on other nonmetallic systems are relatively unexplored. In this paper, we demonstrate that InCl3 can be used effectively to recrystallize CIGS for temperature as low as 450 °C, but that it also induces a modification of the surface composition. Analyses, notably via glancing incidence X-ray diffraction and secondary ion mass spectrometry, show an indium enriched surface as well as a modified alkali profile.
  
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