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Belfore, B., Poudel, D., Ashrafee, T., Palmiotti, E., Lepetit, T., Karki, S., Rajan, G., Rockett, A. & Marsillac, S. 2021. Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se-2 Thin Film. Paper read at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), June. 
Added by: Richard Baschera (2021-10-28 08:00:17)   Last edited by: Richard Baschera (2021-10-28 08:07:44)
Type de référence: Communication
DOI: 10.1109/PVSC43889.2021.9518617
Clé BibTeX: Belfore2021a
Voir tous les détails bibliographiques
Catégories: INTERNATIONAL, MIOPS
Mots-clés: cigs, CuCl2, films, glass, morphology, Photovoltaic systems, Recrystallization, Semiconductor device measurement, semiconductor thin films, Thin film, X-ray scattering
Créateurs: Ashrafee, Belfore, Karki, Lepetit, Marsillac, Palmiotti, Poudel, Rajan, Rockett
Collection: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
Consultations : 12/159
Indice de consultation : 9%
Indice de popularité : 2.25%
Résumé     
Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage co-evaporation process on molybdenum coated glass substrate. A vapor treatment was done in between the second and third stage by flashing CuCl2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.
  
Notes     
ISSN: 0160-8371
  
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