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Poudel, D., Lepetit, T., Belfore, B., Palmiotti, E., Ashrafee, T., Karki, S., Rajan, G., Rockett, A., Barreau, N. & Marsillac, S. 2021. Studying the Recrystallization of Cu(InGa)Se-2 Semiconductor Thin Films by Silver Bromide In-situ Treatment. Paper read at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), June. 
Added by: Richard Baschera (2021-10-28 08:00:17)   Last edited by: Richard Baschera (2021-10-28 08:09:06)
Type de référence: Communication
DOI: 10.1109/PVSC43889.2021.9518578
Clé BibTeX: Poudel2021a
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Catégories: INTERNATIONAL, MIOPS
Mots-clés: AgBr, cigs, Performance evaluation, Photovoltaic systems, Recrystallization, Semiconductor device measurement, semiconductor thin films, silver, Temperature measurement, Thin film, X-ray scattering
Créateurs: Ashrafee, Barreau, Belfore, Karki, Lepetit, Marsillac, Palmiotti, Poudel, Rajan, Rockett
Collection: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
Consultations : 7/154
Indice de consultation : 8%
Indice de popularité : 2%
Résumé     
Cu(In,Ga)Se2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2nd and 3rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Overall, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.
  
Notes     
ISSN: 0160-8371
  
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