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Belfore, B., Poudel, D., Ashrafee, T., Palmiotti, E., Lepetit, T., Karki, S., Rajan, G., Rockett, A. & Marsillac, S. 2021. Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se-2 Semiconductor Thin Films. Paper read at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). 
Added by: Richard Baschera (2021-10-28 08:00:17)   Last edited by: Richard Baschera (2021-10-28 08:10:06)
Type de référence: Communication
DOI: 10.1109/PVSC43889.2021.9518400
Numéro d'identification (ISBN etc.): 978-1-66541-922-2
Clé BibTeX: Belfore2021
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Catégories: INTERNATIONAL, MIOPS
Mots-clés: beta-in2s3, buffer layer, cigs, contact, degradation mechanism, deposition, InCl3, ingress, Moisture, Recrystallization, situ recrystallization, solar-cells, time spectroscopic ellipsometry, vapor treatment
Créateurs: Ashrafee, Belfore, Karki, Lepetit, Marsillac, Palmiotti, Poudel, Rajan, Rockett
Collection: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
Consultations : 8/140
Indice de consultation : 8%
Indice de popularité : 2%
Liens URLs     https://www.webofs ... OS:000701690400531
Résumé     
The recrystallization by indium chloride of Cu(In,Ga)Se-2 thin films deposited by co-evaporation at 350 degrees C was studied. The process of recrystallization consists of the post-deposition treatment of CIGS sample by InCI3 vapor for 30 minutes with emphasis on grain growth. The treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.
  
Notes     
ISSN: 0160-8371 WOS:000701690400531
  
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