IMN

Biblio. IMN

Référence en vue solo

Crossay, A., Gloaguen, H., Cammilleri, D., Lontchi, J., Rebai, A., Barreau, N. & Lincot, D. 2021. Pure sulfide wide gap CIGS on silicon for tandem applications by exploring versatile coevaporation of metallic films and sulfur annealing. Paper read at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), June. 
Added by: Richard Baschera (2021-10-28 08:00:17)   Last edited by: Richard Baschera (2021-10-28 08:11:31)
Type de référence: Communication
DOI: 10.1109/PVSC43889.2021.9518966
Clé BibTeX: Crossay2021a
Voir tous les détails bibliographiques
Catégories: MIOPS
Mots-clés: annealing, coevaporation, gallium, Motion pictures, Photonic band gap, photovoltaic cells, pure sulfide CIGS, silicon, silicon, Tandem solar cells, two step process, X-ray scattering
Créateurs: Barreau, Cammilleri, Crossay, Gloaguen, Lincot, Lontchi, Rebai
Collection: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
Consultations : 17/197
Indice de consultation : 11%
Indice de popularité : 2.75%
Résumé     
Cu(In,Ga)(S,Se)2 (CIGS) is a good candidate for tandem solar cell applications, thanks to its bandgap which can be tuned by changing the ratios In/Ga and Se/S. In particular, wide-gap CIGS is well suited to be implemented into tandem solar cells with silicon bottom cells, the CIGS acting as the top semi-transparent solar cell. Pure sulfide 1.55 eV CIGS already reached efficiencies of 16,9 % via a two-step route consisting of the deposition of metals followed by a reactive sulfur annealing [1], and a 14.2% efficient solar cell was recently reported by Barreau et al, for a bandgap of 1.6 eV based on co-evaporation [2]. In this work, we report on the investigation of two step CIGS deposition on silicon for tandem application. The CIGS absorber is deposited via a sequential method, where Cu, In and Ga are deposited by versatile co-evaporation process, followed by an annealing at 600°C in presence of sulfur powder. Optimization of deposition and annealing conditions led to the formation of a dense and adherent CIGS film on silicon. EDX mapping analysis show the formation of a two-layer structure which is suitable for high efficiency cells [2] with overall Cu(In+Ga) (CGI) of 1,0. XRD and PL analysis confirm the formation of qualitative wide gap CIGS material. This work shows the suitability of using this coevaporation method for exploring the synthesis of wide-gap pure sulfide CIGS on silicon. A further investigation on the addition of selenium during the evaporation process shows the possibility to tune the gallium grading in the final CIGSu(Se) layer.
  
Notes     
ISSN: 0160-8371
  
wikindx 4.2.2 ©2014 | Références totales : 2592 | Requêtes métadonnées : 64 | Exécution de script : 0.11611 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale