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Riah, B., Camus, J., Ayad, A., Rammal, M., Zernadji, R., Rouag, N. & Djouadi, M. A. (2021) Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings, 11 1063. 
Added by: Richard Baschera (2021-10-07 08:42:05)   Last edited by: Richard Baschera (2021-10-07 08:43:21)
Type de référence: Article
DOI: 10.3390/coatings11091063
Clé BibTeX: Riah2021
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Catégories: ID2M, INTERNATIONAL
Mots-clés: direct current magnetron sputtering, fiber, heteroepitaxial growth, hexagonal AlN, texture, thin films
Créateurs: Ayad, Camus, Djouadi, Rammal, Riah, Rouag, Zernadji
Collection: Coatings
Consultations : 3/171
Indice de consultation : 6%
Indice de popularité : 1.5%
Liens URLs     https://www.mdpi.com/2079-6412/11/9/1063
Résumé     
This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).
  
Notes     
Number: 9 Publisher: Multidisciplinary Digital Publishing Institute
  
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