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Barreau, N., Durand, O., Bertin, E., Létoublon, A., Cornet, C., Tsoulka, P., Gautron, E. & Lincot, D. (2021) Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells. Solar Energy Materials and Solar Cells, 233 111385.
Added by: Richard Baschera (2021-10-01 08:08:44) Last edited by: Richard Baschera (2021-10-01 08:13:24) |
| Type de référence: Article DOI: 10.1016/j.solmat.2021.111385 Numéro d'identification (ISBN etc.): 0927-0248 Clé BibTeX: Barreau2021 Voir tous les détails bibliographiques  |
Catégories: IMN, MIOPS Mots-clés: Epitaxial CIGSe, Gallium phosphide, Molecular beam epitaxy, silicon, tem, XRD structural Characterization Créateurs: Barreau, Bertin, Cornet, Durand, Gautron, Létoublon, Lincot, Tsoulka Collection: Solar Energy Materials and Solar Cells |
Consultations : 1/367
Indice de consultation : 8% Indice de popularité : 2% |
| Liens URLs https://www.scienc ... /S092702482100427X |
| Résumé |
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In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudo-substrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive structural characterisation of epi-CIGSe is carried out via X-ray diffraction as well as transmission electron microscopy. Sturdy evidence of an epitaxial growth of CIGSe on (GaP/Si)(001) is observed, with the propagation of twins originating from the GaP/Si interface, through the CIGSe/GaP interface. This work aims at paving the way for future CIGSe/GaP/Si structures for the development of tandem solar cells with a c-Si bottom cell, and a GaP interfacial buffer layer for band edge engineering, allowing for the monolithic epitaxial growth of high quality CIGSe as a thin film top cell absorber.
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