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Barreau, N., Durand, O., Bertin, E., Létoublon, A., Cornet, C., Tsoulka, P., Gautron, E. & Lincot, D. (2021) Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells. Solar Energy Materials and Solar Cells, 233 111385. 
Added by: Richard Baschera (2021-10-01 08:08:44)   Last edited by: Richard Baschera (2021-10-01 08:13:24)
Type de référence: Article
DOI: 10.1016/j.solmat.2021.111385
Numéro d'identification (ISBN etc.): 0927-0248
Clé BibTeX: Barreau2021
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Catégories: IMN, MIOPS
Mots-clés: Epitaxial CIGSe, Gallium phosphide, Molecular beam epitaxy, silicon, tem, XRD structural Characterization
Créateurs: Barreau, Bertin, Cornet, Durand, Gautron, Létoublon, Lincot, Tsoulka
Collection: Solar Energy Materials and Solar Cells
Consultations : 3/66
Indice de consultation : 7%
Indice de popularité : 1.75%
Liens URLs     https://www.scienc ... /S092702482100427X
Résumé     
In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudo-substrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive structural characterisation of epi-CIGSe is carried out via X-ray diffraction as well as transmission electron microscopy. Sturdy evidence of an epitaxial growth of CIGSe on (GaP/Si)(001) is observed, with the propagation of twins originating from the GaP/Si interface, through the CIGSe/GaP interface. This work aims at paving the way for future CIGSe/GaP/Si structures for the development of tandem solar cells with a c-Si bottom cell, and a GaP interfacial buffer layer for band edge engineering, allowing for the monolithic epitaxial growth of high quality CIGSe as a thin film top cell absorber.
  
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