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Meyer, T., Girard, A., LeDain, G., Rhallabi, A., Baudet, E., Nazabal, V., Nemec, P. & Cardinaud, C. (2021) Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas. Applied Surface Science, 549 149192.
Added by: Richard Baschera (2021-04-09 11:39:09) Last edited by: Richard Baschera (2021-04-09 11:41:07) |
| Type de référence: Article DOI: 10.1016/j.apsusc.2021.149192 Numéro d'identification (ISBN etc.): 0169-4332 Clé BibTeX: Meyer2021 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM Mots-clés: etching, Ge-Sb-Se, icp, Micromasking, SF Créateurs: Baudet, Cardinaud, Girard, LeDain, Meyer, Nazabal, Nemec, Rhallabi Collection: Applied Surface Science |
Consultations : 1/431
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| Liens URLs https://www.scienc ... /S0169433221002683 |
| Résumé |
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A functional waveguide for photonic applications must fulfil some specific requirements in terms of dimension, shape, etch rate and roughness. In this study, Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF3, (Se)-Sb-Fx and (Sb)-Se-F environments. The latter have been identified with in situ XPS. Systematically, a SF6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF6/Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux which were calculated using a global model. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the RMS roughness. A synergistic effect, between ion bombardment and reactive neutral species, is observed when varying both parameters. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures ({<}4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF6/Ar plasma with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.
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