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Crossay, A., Cammilleri, D., Thomere, A., Zerbo, B., Rebai, A., Barreau, N. & Lincot, D. (2021) Elaboration of wide bandgap CIGS on silicon by electrodeposition of stacked metal precursors and sulfur annealing for tandem solar cell applications. EPJ Photovolt. 11 11. 
Added by: Richard Baschera (2021-02-09 13:10:59)   Last edited by: Richard Baschera (2021-02-09 13:12:40)
Type de référence: Article
DOI: 10.1051/epjpv/2020008
Numéro d'identification (ISBN etc.): 2105-0716
Clé BibTeX: Crossay2021
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Catégories: MIOPS
Mots-clés: electrodeposition, pure sulfide CIGS, silicon, silver-sulfide, Tandem solar cells
Créateurs: Barreau, Cammilleri, Crossay, Lincot, Rebai, Thomere, Zerbo
Collection: EPJ Photovolt.
Consultations : 10/263
Indice de consultation : 6%
Indice de popularité : 1.5%
Résumé     
A method was developed for the electrodeposition of Cu-In-Ga precursor layers to elaborate Cu(In,Ga)(S,Se)(2) (CIGS) thin films on silicon substrates for future application as silicon/wide-gap CIGS tandem solar cells. An underlayer of Ag was first deposited on silicon substrates to ensure a good adhesion of the electrodeposited stack and to serve as cathode during the deposition process. Cu, In and Ga layers were then sequentially electrodeposited. Ag-Cu-In-Ga precursor layers were finally subjected to elemental sulfur annealing at 600 degrees C. Formation of compact and adherent AgCIGS is observed. X ray diffraction and photoluminescence analyses confirm the formation of wide-gap CIGS of about 1.6 eV, with a spontaneous gallium grading over the depth of the sample leading to the formation of a bi-layer structure with a gallium rich layer at the interface with silicon.
  
Notes     
Place: Les Ulis Cedex A Publisher: Edp Sciences S A WOS:000607778900001
  
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