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Meyer, T., LeDain, G., Girard, A., Rhallabi, A., Bouška, M., Nemec, P., Nazabal, V. & Cardinaud, C. (2020) Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O-2 plasmas. Plasma Sources Sci. Technol. 29 105006.
Added by: Richard Baschera (2020-11-17 13:20:19) Last edited by: Richard Baschera (2020-11-17 14:03:42) |
| Type de référence: Article DOI: 10.1088/1361-6595/abb0d0 Numéro d'identification (ISBN etc.): 1361-6595 Clé BibTeX: Meyer2020 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM Créateurs: Bouška, Cardinaud, Girard, LeDain, Meyer, Nazabal, Nemec, Rhallabi Collection: Plasma Sources Sci. Technol. |
Consultations : 1/300
Indice de consultation : 5% Indice de popularité : 1.25% |
| Liens URLs https://iopscience ... 8/1361-6595/abb0d0 |
| Résumé |
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Excited species, reactive neutral species and positive ions, produced during the etching of Ge, Se and GeSe2 targets in inductively coupled plasmas, were identified by means of mass spectrometry (MS) and optical emission spectroscopy. The surface of etched Ge(39)Se(61)thin films were analyzed thanks toin situx-ray photoelectron spectroscopy (XPS) and compared with those of Ge and Se etched samples. In 100% SF6, the successive adsorption of fluorine atoms forms SeFx(x=2, 4, 6) and GeFx(x=2, 4) stable and volatile products, generating a surface with few residues as interpreted within situXPS. The identification of SSeFx+(x=2, 3, 7) ions confirms that sulfur atoms play a role during the etching of Se-containing materials. A 0D kinetic model predicted the evolution of reactive neutral fluxes, ion fluxes and plasma parameters (T-e and n(e)) in SF6/Ar plasmas. It was found that the SeF(6)and GeF(4)concentrations, through SeF5+ and GeF3+ MS signals, were related to the fluorine atom flux. In SF6/O-2, the simultaneous effect of fluorine and oxygen adsorption induces (Se)(x)-Ge-R4-x environments (R= F, O) at the surface of the Ge39Se61 thin films.
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