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Harel, S., Arzel, L., Lepetit, T., Zabierowski, P. & Barreau, N. (2020) Influence of Sulfur Evaporation during or after KF-Post Deposition Treatment On Cu(In,Ga)Se-2/CdS Interface Formation. ACS Appl. Mater. Interfaces, 12 46953–46962. 
Added by: Richard Baschera (2020-11-17 13:20:19)   Last edited by: Richard Baschera (2020-11-17 14:05:57)
Type de référence: Article
DOI: 10.1021/acsami.0c12455
Numéro d'identification (ISBN etc.): 1944-8244, 1944-8252
Clé BibTeX: Harel2020
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Catégories: INTERNATIONAL, MIOPS
Créateurs: Arzel, Barreau, Harel, Lepetit, Zabierowski
Collection: ACS Appl. Mater. Interfaces
Consultations : 7/160
Indice de consultation : 3%
Indice de popularité : 0.75%
Liens URLs     https://pubs.acs.o ... 021/acsami.0c12455
Résumé     
This work investigates the impact of the elemental sulfur evaporation during or after KF-post deposition treatment (1(F-PDT) on the resulting Cu(In,Ga)Se-2/chemical bath deposited(CBD)-CdS interface. Chemical composition of the various interfaces were determined through Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger spectroscopy (XAES). Cu(In,Ga)Se-2 absorber which experienced KF-PDT in selenium atmosphere (KSe sample) exhibits the formation of the well-reported In-Se based topping layer. Additional exposure to elemental sulfur, resulting in KSe+S sample, induces the partial sulfurization of this overlayer and/or of the absorber. After short immersion into the CdS bath, the resulting Inrich surfaces of KSe and KSe+S are likely to turn into few atomic layers of Cd-In-(Se/S)-O whose [S]/[Se]+[S] ratio and O content depend on their respective post deposition treatment. In contrast, KF-PDT performed in S atmosphere does not show an In-rich surface, making the early stage of CdS growth similar to that observed on untreated CIGSe.
  
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