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Rupp, J. A. J., Janod, E., Besland, M. .-P., Corraze, B., Kindsmüller, A., Querre, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R. & Wouters, D. J. (2020) Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode. Thin Solid Films, 705 138063. 
Added by: Richard Baschera (2020-06-05 07:48:37)   Last edited by: Richard Baschera (2020-06-05 07:50:03)
Type de référence: Article
DOI: 10.1016/j.tsf.2020.138063
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Rupp2020
Voir tous les détails bibliographiques
Catégories: INTERNATIONAL, PCM, PMN
Mots-clés: Bixbyite, Reactive sputtering, vanadium oxide, Vanadium sesquioxide
Créateurs: Besland, Cario, Corraze, Dittmann, Janod, Kindsmüller, Querre, Rupp, Tranchant, Waser, Wouters
Collection: Thin Solid Films
Consultations : 4/326
Indice de consultation : 4%
Indice de popularité : 1%
Liens URLs     http://www.science ... /S0040609020302753
Résumé     
This comprehensive work investigates a technologically appealing synthesis of V2O3 oxide thin films for electronic applications by the use of direct reactive sputtering with a heavily diluted gas mixture on a conducting platinum electrode. Morphological characterization was performed by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Diffraction and X-Ray Reflectometry. Vanadium valence states were investigated by X-Ray Photoelectron Spectroscopy and crystalline phases were checked by X-Ray Grazing Incidence measurements. Low temperature electrical transport characteristics were determined by 2-point probe measurements. Only amorphous V2O3 was found to exist in a mixed-valence phase in the investigated parameter range. Deposition temperatures between 400 °C and 550 °C enable formation of mixtures between crystallographic phases of corundum- and bixbyite-type V2O3 polymorphs. Depending on temperature and sputtering power, morphology and stoichiometry can be tuned to generate four distinct type of electrical transport characteristics. Most promising electrical properties of corundum V2O3 with a resistance ratio of up to four orders of magnitude (during the low temperature insulator-to-metal transition) have been obtained for a moderate sputtering power of 50 W (on a 1″ target) at a deposition temperature of 600 °C. Reactive sputtering thus enables direct control of structural and electrical parameters for polycrystalline V2O3 thin film phases on a conducting substrate.
  
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