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Ballabio, M., Marrón, D. F., Barreau, N., Bonn, M. & Cánovas, E. (2020) Composition-Dependent Passivation Efficiency at the CdS/CuIn1-xGaxSe2 Interface. Advanced Materials, 32 1907763.
Added by: Richard Baschera (2020-04-24 10:26:41) Last edited by: Richard Baschera (2020-04-24 10:42:44) |
| Type de référence: Article DOI: 10.1002/adma.201907763 Numéro d'identification (ISBN etc.): 1521-4095 Clé BibTeX: Ballabio2020 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, MIOPS Mots-clés: cigs, CIGS/CdS, interfacial recombination, Solar cells, THz spectroscopy Créateurs: Ballabio, Barreau, Bonn, Cánovas, Marrón Collection: Advanced Materials |
Consultations : 1/344
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| Liens URLs http://onlinelibra ... 002/adma.201907763 |
| Résumé |
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The bandgap of CuIn1-xGaxSe2 (CIGS) chalcopyrite semiconductors can be tuned between ≈1.0 and ≈1.7 eV for Ga contents ranging between x = 0 and x = 1. While an optimum bandgap of 1.34 eV is desirable for achieving maximum solar energy conversion in solar cells, state-of-the-art CIGS-based devices experience a drop in efficiency for Ga contents x {>} 0.3 (i.e., for bandgaps {>}1.2 eV), an aspect that is limiting the full potential of these devices. The mechanism underlying the limited performance as a function of CIGS composition has remained elusive: both surface and bulk recombination effects are proposed. Here, the disentanglement between surface and bulk effects in CIGS absorbers as a function of Ga content is achieved by comparing photogenerated charge carrier dynamics in air/CIGS and surface-passivated ZnO/CdS/CIGS samples. While surface passivation prevents surface recombination of charge carriers for low Ga content (x {<} 0.3; up to 1.2 eV bandgap), surface recombination dominates for higher-bandgap materials. The results thus demonstrate that surface, rather than bulk effects, is responsible for the drop in efficiency for Ga contents larger than x ≈ 0.3.
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