Biblio. IMN

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Caldes, M. T., Guillot-Deudon, C., Thomere, A., Penicaud, M., Gautron, E., Boullay, P., Bujoli-Doeuff, M., Barreau, N., Jobic, S. & Lafond, A. (2020) Layered Quaternary Compounds in the Cu2S-In2S3-Ga2S3 system. Inorg. Chem. 59 4546–4553. 
Added by: Richard Baschera (2020-04-24 10:26:40)   Last edited by: Richard Baschera (2020-04-24 10:33:37)
Type de référence: Article
DOI: 10.1021/acs.inorgchem.9b03686
Numéro d'identification (ISBN etc.): 0020-1669
Clé BibTeX: Caldes2020
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Catégories: IMN, MIOPS
Créateurs: Barreau, Boullay, Bujoli-Doeuff, Caldes, Gautron, Guillot-Deudon, Jobic, Lafond, Penicaud, Thomere
Collection: Inorg. Chem.
Consultations : 2/221
Indice de consultation : 3%
Indice de popularité : 0.75%
Liens URLs ... .inorgchem.9b03686
Several new materials with four structure-types (e.g., Cu0.32In1.74Ga0.84S4 (CIGS4), Cu0.65In1.75Ga1.4S5 (CIGS5), Cu1.44In2.77Ga0.76S6 (CIGS6), and Cu1.1In2.49Ga1.8S7 (CIGS7)) have been evidenced in the Cu2S–In2S3–Ga2S3 pseudo-ternary system. All of them present a 2D structure built upon infinite 2/∞[InS2] layers ((InS6) octahedra sharing edges) on which condense on both sides mono-, bi-, or tri-2/∞[MS] layers ((MS4) tetrahedra (M = Cu, In, Ga) sharing corners). (M(Td))n−2(In(Oh))Sn slabs are separated from each other by a van der Waals gap, and subscript n refers to the number of sulfur layers within the building block. These compounds have the propensity to display stacking faults but also polymorphic forms. Their optical gap (ca. 1.7 eV) is quite similar to the one of the Cu(In0.7Ga0.3)S2 chalcopyrite absorbers used in tandem solar cells, and the major charge carriers are holes. This suggests that they might be very attractive for photovoltaic applications in thin film devices but also for photocatalysis.
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