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Urbaniak, A., Macielak, K., Barreau, N., Szaniawski, P. & Edoff, M. (2019) Signatures of extended defects in Cu(In,Ga)Se-2 observed using capacitance spectroscopy techniques. Journal of Physics and Chemistry of Solids, 134 58–63. 
Added by: Richard Baschera (2019-09-17 13:40:35)   Last edited by: Richard Baschera (2019-09-17 13:41:28)
Type de référence: Article
DOI: 10.1016/j.jpcs.2019.05.034
Clé BibTeX: Urbaniak2019
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Catégories: INTERNATIONAL, MIOPS
Créateurs: Barreau, Edoff, Macielak, Szaniawski, Urbaniak
Collection: Journal of Physics and Chemistry of Solids
Consultations : 2/199
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
This work concerns the interpretation of defect spectroscopy signals in CuInSe2-and Cu(In,Ga)Se-2-based Schottky junctions and thin films, which are investigated using capacitance- and current-based techniques. Two common signals are distinguished. It is shown here that the activation energies and consequently the emission rates vary between the samples and are strongly correlated with the hole concentration in the material. Models that can account for these changes are discussed. Based on deep-level transient spectroscopy and conductivity measurements, we present arguments for the validity of the existing models and discuss the hypothesis that the observable signals may originate from extended defects in Cu(In,Ga)Se-2.
  
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