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Li, D., Dai, S., Goullet, A. & Granier, A. (2019) Ion impingement effect on the structure and optical properties of TixSi1-xO2 films deposited by ICP-PECVD. Plasma Processes and Polymers, 16 1900034. 
Added by: Richard Baschera (2019-08-23 13:33:52)   Last edited by: Richard Baschera (2019-08-23 13:39:11)
Type de référence: Article
DOI: 10.1002/ppap.201900034
Clé BibTeX: Li2019b
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Catégories: INTERNATIONAL, PCM
Créateurs: Dai, Goullet, Granier, Li
Collection: Plasma Processes and Polymers
Consultations : 1/256
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
TixSi1-xO2 films are grown by plasma-enhanced chemical vapor deposition from oxygen-rich O-2/titanium tetraisopropoxide/hexamethyldisiloxane radiofrequency inductively coupled plasmas at low pressure. By applying a substrate bias of -50 V, the ion energy is increased from 15 to 75 eV, which has almost no effect on the by-products, whereas the deposition rate is decreased and the Ti/Si atomic ratio in the film is increased. For the lowest hexamethyldisiloxane fraction in precursor, applying a -50 V bias leads to the formation of TiO2 in rutile phase in the film. The film optical properties (optical index and band gap) are shown to be mainly governed by the film chemical composition.
  
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