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Antoun, G., Dussart, R., Tillocher, T., Lefaucheux, P., Cardinaud, C., Girard, A., Tahara, S., Yamazaki, K., Yatsuda, K., Faguet, J. & Maekawa, K. (2019) The role of physisorption in the cryogenic etching process of silicon. Japanese Journal of Applied Physics, 58 SEEB03. 
Added by: Richard Baschera (2019-07-25 07:41:21)   Last edited by: Richard Baschera (2019-07-25 07:42:14)
Type de référence: Article
DOI: 10.7567/1347-4065/ab1639
Clé BibTeX: Antoun2019
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Créateurs: Antoun, Cardinaud, Dussart, Faguet, Girard, Lefaucheux, Maekawa, Tahara, Tillocher, Yamazaki, Yatsuda
Collection: Japanese Journal of Applied Physics
Consultations : 9/269
Indice de consultation : 3%
Indice de popularité : 0.75%
The growth mechanism of the passivation layer in the cryogenic process used for silicon deep etching is explored experimentally in an inductively coupled plasma reactor. In particular, the role of SiF4 etching by-products on the SiOxFy layer deposition is investigated. The deposition of a SiOxFy layer using SiF4 and O-2 gases is studied by in situ ellipsometric spectroscopy in different experimental configurations to devise the deposition mechanism: SiF4/O-2 plasma mixture, alternation of SiF4 plasma and O-2 plasma steps and alternation of SiF4 flow without plasma and O-2 plasma steps. The refractive index and the thickness of the deposited layer are measured for different substrate temperatures, from -125 degrees C to 20 degrees C. Although some of the passivation layer is removed during the wafer warm up, a residual amount remains at the surface. The deposited SiOxFy layer forms more efficiently at low temperature with an optimal temperature of -100 degrees C in our experimental conditions. The passivation layer was etched by a SF6 plasma without bias versus the deposition temperature, to evaluate its resistance to plasma etching steps. The passivation layer was analyzed by ex situ EDX and XPS. We investigated the role of SiF4 low temperature physisorption in the formation of the passivation layer on the sidewalls of the features that are being etched, which are not submitted to ion bombardment. It is shown that physisorption of SiFx species play an important role because their residence time at the surface is longer, thus increasing the probability of reaction with oxygen. (C) 2019 The Japan Society of Applied Physics
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