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Rammal, M., Rhallabi, A., Neel, D., Make, D., Shen, A. & Djouadi, A. (2019) AlN Etching under ICP Cl-2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model. Mrs Advances, 4 1579–1587. 
Added by: Richard Baschera (2019-07-15 14:27:14)   Last edited by: Richard Baschera (2019-07-17 09:52:59)
Type de référence: Article
DOI: 10.1557/adv.2019.84
Clé BibTeX: Rammal2019
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Catégories: ID2M, PCM
Créateurs: Djouadi, Make, Neel, Rammal, Rhallabi, Shen
Collection: Mrs Advances
Consultations : 6/223
Indice de consultation : 2%
Indice de popularité : 0.5%
AlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl-2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl-2/Ar mixture allows the etching of AlN materials. However the obtained properties of etched AlN is still not in conformity with the technological specification especially for the condition which the etched AlN must be kept only along the sidewall of the InP laser cavity and be removed elsewhere (selective etching). To know more about the effect of the BCl3 addition to the Cl-2/Ar plasma mixture, global model of BCl3/Cl-2/Ar is developed to quantify the neutral and ion densities as well as the electron density and temperature. The simulation results show that the electron density and low pressure linearly varies with the
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