 |
 |
|
Leblanc, A., Mercier, N., Allain, M., Dittmer, J., Pauporte, T., Fernandez, V., Boucher, F., Kepenekian, M. & Katan, C. (2019) Enhanced Stability and Band Gap Tuning of alpha-[HC(NH2)(2)]PbI3 Hybrid Perovskite by Large Cation Integration. Acs Applied Materials & Interfaces, 11 20743–20751.
Added by: Richard Baschera (2019-07-15 14:27:14) Last edited by: Richard Baschera (2019-07-17 09:29:59) |
| Type de référence: Article DOI: 10.1021/acsami.9b00210 Clé BibTeX: Leblanc2019 Voir tous les détails bibliographiques  |
Catégories: IMN, ST2E Créateurs: Allain, Boucher, Dittmer, Fernandez, Katan, Kepenekian, Leblanc, Mercier, Pauporte Collection: Acs Applied Materials & Interfaces |
Consultations : 14/317
Indice de consultation : 2% Indice de popularité : 0.5% |
| Résumé |
|
We report room-temperature synthesis of lead- and iodide-deficient alpha-[HC (NH2)(2)]PbI3 perovskites (abbreviated d-alpha-FAPI, FA(+) = formamidinium), with the general formula (A',FA)(1)(-x)[Pb1-xI3-x] (with A' = hydroxyethylammonium (HEA(+)) or thioethylammonium (TEA(+)) cations, 0.04 {<}= x {<}= 0.15). These materials retain a 3D character of their perovskite network despite incorporation of large HEA(+) or TEA(+) cations, demonstrating that the Goldschmidt tolerance factor can be bypassed. We found that thin films of (TEA,FA)(1)(-x)[Pb1-xI3-x(x = 0.04 and 0.13) show exceptional alpha-phase stability under ambient conditions, 1 order of magnitude higher than alpha-FAPI and alpha-(Cs,FA)PbI3 thin films. d-alpha-FAPI phases are shown to maintain a direct band gap, which increases monotonously for x ranging from 0 up to 0.20, with characteristics of a p-type semiconductor for low concentrations of vacancies (x {<}= 0.13) and n-type for larger ones. They offer alternatives to reach the methylammonium- and bromine-free stable alpha-FAPI-type phase and open new avenues in the field of perovskite solar cells, up to band gap tuning desirable for tandem solar cells.
|