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Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S., Ramesh, R., Balaji, M., Gautier, N. & Baskar, K. (2019) Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications. Applied Surface Science, 476 993–999. 
Added by: Richard Baschera (2019-03-26 10:30:15)   Last edited by: Richard Baschera (2019-03-26 10:31:22)
Type de référence: Article
DOI: 10.1016/j.apsusc.2019.01.156
Clé BibTeX: Prabakaran2019
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Créateurs: Balaji, Baskar, Gautier, Jayasakthi, Prabakaran, Pradeep, Ramesh, Sanjay, Surender
Collection: Applied Surface Science
Consultations : 11/280
Indice de consultation : 2%
Indice de popularité : 0.5%
InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16-18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.
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