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Harel, S., Jonnard, P., Lepetit, T., Arzel, L. & Barreau, N. (2019) Impact of KF-post deposition treatment on Cu(In,Ga)Se-2 surface and Cu(In, Ga)Se-2/CdS interface sulfurization. Applied Surface Science, 473 1062–1065. 
Added by: Richard Baschera (2019-02-15 10:21:58)   Last edited by: Richard Baschera (2019-02-15 10:22:48)
Type de référence: Article
DOI: 10.1016/j.apsusc.2018.12.062
Clé BibTeX: Harel2019
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Catégories: MIOPS
Créateurs: Arzel, Barreau, Harel, Jonnard, Lepetit
Collection: Applied Surface Science
Consultations : 2/368
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Partial sulfurization of Cu(In,Ga)Se-2 (CIGSe) absorbers contributes to enhance photovoltaic performance of chalcopyrite based solar cells. Alternatively, KF post-deposition treatment (KF-PDT) performed under Se atmosphere has recently been used to improve the efficiency of CIGSe thin film based solar cells. In this work, we study the potential sulfurization of KF-treated CIGSe during the chemical bath deposition of the CdS buffer layer. Therefore, buried interfaces between KF-PDT CIGSe under Se or S atmosphere and CdS are investigated with the help of non-destructive and depth sensitive X-ray emission spectroscopy. No CIGSe sulfurization is detected at the absorber/CdS interface when KF treatment is performed under selenium atmosphere. In contrast, when KF treatment is done under sulfur atmosphere, partial sulfurization of CIGSe is detected at the CIGSe/CdS interface. We show through X-ray photoemission spectroscopy that the CIGSe sulfurization occurs during the KF-PDT performed under sulfur atmosphere. We also demonstrate that alkali favors greatly CIGSe surface sulfurization when the chalchopyrite is exposed to sulfur atmosphere.
  
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