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Adda, C., Cario, L., Trenchant, J., Janod, E., Besiand, M.-P., Rozenberg, M., Stoliar, P. & Corraze, B. (2018) First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film. MRS Commun. 8 835–841. 
Added by: Richard Baschera (2018-12-20 08:24:17)   Last edited by: Richard Baschera (2018-12-20 08:28:45)
Type de référence: Article
DOI: 10.1557/mrc.2018.90
Numéro d'identification (ISBN etc.): 2159-6859
Clé BibTeX: Adda2018a
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Catégories: INTERNATIONAL, PCM, PMN
Mots-clés: devices, gap mott insulators, mechanisms, memories, systems, transition
Créateurs: Adda, Besiand, Cario, Corraze, Janod, Rozenberg, Stoliar, Trenchant
Collection: MRS Commun.
Consultations : 3/223
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)(2)O-3 were deposited by magnetron sputtering and patterned with micron-scale TIN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)(2)O-3 thin films.
  
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