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Tesler, F., Adda, C., Tranchant, J., Corraze, B., Janod, E., Cario, L., Stoliar, P. & Rozenberg, M. (2018) Relaxation of a Spiking Mott Artificial Neuron. Phys. Rev. Appl. 10 054001. 
Added by: Richard Baschera (2018-12-20 08:24:17)   Last edited by: Richard Baschera (2018-12-20 08:29:47)
Type de référence: Article
DOI: 10.1103/PhysRevApplied.10.054001
Numéro d'identification (ISBN etc.): 2331-7019
Clé BibTeX: Tesler2018
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Mots-clés: gata4se8, insulators, mean-field theory, memristor, nanoscale, systems, transition
Créateurs: Adda, Cario, Corraze, Janod, Rozenberg, Stoliar, Tesler, Tranchant
Collection: Phys. Rev. Appl.
Consultations : 1/387
Indice de consultation : 4%
Indice de popularité : 1%
We consider the phenomenon of electric Mott transition (EMT), which is an electrically induced insulator-to-metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation, the final state may show a short-lived or a long-lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing, the induced metastable phase may become further stabilized by the electroelastic effect. We present a systematic study of the model by numerical simulations and compare the results to experiments in Mott insulators of the AM(4)Q(8) family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott neuron [P. Stoliar et al., Adv. Funct. Mat. 27, 1604740 (2017)] to provide a better insight into the physical mechanism of its relaxation. This is a key feature for future implementations of neuromorphic circuits.
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