IMN

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Tranchant, J., Querre, M., Janod, E., Besland, M. .-P., Corraze, B. & Cario, L. 2018. Mott memory devices based on the Mott insulator (V1-xCrx)(2)O-3. Paper read at 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW). 
Added by: Richard Baschera (2018-12-20 08:10:30)   Last edited by: Richard Baschera (2018-12-20 08:11:35)
Type de référence: Communication
Numéro d'identification (ISBN etc.): {978-1-5386-5247-3}
Clé BibTeX: Tranchant{2018}
Voir tous les détails bibliographiques
Catégories: PCM, PMN
Créateurs: Besland, Cario, Corraze, Janod, Querre, Tranchant
Éditeur: {IEEE; Tokyo Electron; Panasonic; HUAWEI; Winbond; Rambus; Ememory; UMC; Western Digital; TSMC; SCREEN; Lam Res; FUJITSU; SST; Floadia; Avalanche Technol; TOSHIBA MEMORY; APPLIED MAT; MXIC; Intel; SONY}
Collection: {2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW)}
Consultations : 1/242
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
{The discovery of an electric Mott transition (EMT) in Mott insulators has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to the memory potential of chalcogenide Mott insulators, we present here new results obtained on a memory cell device based on the canonical Mott insulator oxide (V0.95Cr0.05)(2)O-3. Devices are compatible with most microelectronics standards and thin films demonstrate an excellent crystalline quality which ensures that the resistive switching is based on the EMT. Performances obtained on 100 nm thick layers with 330 nm electrodes are very competitive. Indeed, without filament forming step, features such as 3.5 V / 100 ns programming pulses, 48 mu A writing current, 8 pJ writing energy or endurance of 5000 cycles demonstrate the strong potential of Mott memories. Besides we show that Cr-free 20 nm thick strained-V2O3 layers are promising as Mott memory active material.}
  
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