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Adda, C., Corraze, B., Stoliar, P., Diener, P., Tranchant, J., Filatre-Furcate, A., Fourmigue, M., Lorcy, D., Besland, M.-P., Janod, E. & Cario, L. (2018) Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron. J. Appl. Phys. 124 152124.
Added by: Richard Baschera (2018-12-19 13:40:55) Last edited by: Richard Baschera (2018-12-19 13:41:58) |
| Type de référence: Article DOI: 10.1063/1.5042756 Numéro d'identification (ISBN etc.): 0021-8979 Clé BibTeX: Adda2018 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM, PMN Mots-clés: complexes, devices, mechanisms, memories, nbo2, systems, transition Créateurs: Adda, Besland, Cario, Corraze, Diener, Filatre-Furcate, Fourmigue, Janod, Lorcy, Stoliar, Tranchant Collection: J. Appl. Phys. |
Consultations : 1/705
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| Résumé |
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A major challenge in the field of neurocomputing is to mimic the brain's behavior by implementing artificial synapses and neurons directly in hardware. Toward that purpose, many researchers are exploring the potential of new materials and new physical phenomena. Recently, a new concept of the Leaky Integrate and Fire (LIF) artificial neuron was proposed based on the electric Mott transition in the inorganic Mott insulator GaTa4Se8. In this work, we report on the LIF behavior in simple two-terminal devices in three chemically very different compounds, the oxide (V0.89Cr0.11)(2)O-3, the sulfide GaMo4S8, and the molecular system [Au(iPr-thiazdt)2] (C12H14AuN2S8), but sharing a common feature, their Mott insulator ground state. In all these devices, the application of an electric field induces a volatile resistive switching and a remarkable LIF behavior under a train of pulses. It suggests that the Mott LIF neuron is a general concept that can be extended to the large class of Mott insulators. Published by AIP Publishing.
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