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Sarrazin, A., Posseme, N., Pimenta-Barros, P., Barnola, S., Gharbi, A., Argoud, M., Tiron, R. & Cardinaud, C. (2018) Block copolymer selectivity: A new dry etch approach for cylindrical applications. Journal of Vacuum Science & Technology B, 36 041803.
Added by: Richard Baschera (2018-08-20 09:23:12) Last edited by: Richard Baschera (2018-08-20 09:24:00) |
| Type de référence: Article DOI: 10.1116/1.5034133 Clé BibTeX: Sarrazin2018 Voir tous les détails bibliographiques  |
Catégories: PCM Créateurs: Argoud, Barnola, Cardinaud, Gharbi, Pimenta-Barros, Posseme, Sarrazin, Tiron Collection: Journal of Vacuum Science & Technology B |
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| Résumé |
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A critical challenge for directed self-assembly of block copolymers is the selectivity between the two polymer phases. Polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) is one of the most studied block-copolymers to reach sub-20nm patterns. A very high PMMA/PS selectivity ({>}10: 1) is required to conserve a sufficient PS pattern thickness allowing pattern transfer to sublayers. In this paper, the authors propose to develop a chemistry allowing a full PMMA removal without PS consumption. It is based on CO and CO-H-2 cycles allowing to get a very high etch control. The proposed etch mechanisms have been understood thanks to x-ray photoelectron spectroscopy analyses performed on blanket wafers. Finally, this new etch process has been validated on the cylindrical PS-b-PMMA patterned structure. Published by the AVS.
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