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Keraudy, J., Boyd, R. D., Shimizu, T., Helmersson, U. & Jouan, P. .-Y. (2018) Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature. Applied Surface Science, 454 148–156. 
Added by: Richard Baschera (2018-07-24 14:20:58)   Last edited by: Richard Baschera (2018-07-24 14:22:10)
Type de référence: Article
DOI: 10.1016/j.apsusc.2018.05.061
Clé BibTeX: Keraudy2018
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Créateurs: Boyd, Helmersson, Jouan, Keraudy, Shimizu
Collection: Applied Surface Science
Consultations : 3/305
Indice de consultation : 3%
Indice de popularité : 0.75%
The precise control of the growth nanostructured thin films at low temperature is critical for the continued development of microelectronic enabled devices. In this study, nanocomposite Ni-Si-N thin films were deposited at low temperature by reactive high-power impulse magnetron sputtering. A composite Ni-Si target (15 at.% Si) in combination with a Ar/N-2 plasma were used to deposit films onto Si(0 01) substrates, without any additional substrate heating or any post-annealing. The films microstructure changes from a polycrystalline to nanocomposite structure when the nitrogen content exceeds 16 at.%. X-ray diffraction and (scanning) transmission electron microscopy analyses reveal that the microstructure consists of nanocrystals, NixSi (x {>} 1) 7-8 nm in size, embedded in an amorphous SiN x matrix. It is proposed that this nanostructure is formed at low temperatures due to the repeated-nucleation of NixSi nanocrystals, the growth of which is restricted by the formation of the SiNx phase. X-ray photoelectron spectroscopy revealed the trace presence of a ternary solid solution mainly induced by the diffusion of Ni into the SiNx matrix. Four-probe electrical measurements reveal all the deposited films are electrically conducing.
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