 |
 |
|
Keraudy, J., Boyd, R. D., Shimizu, T., Helmersson, U. & Jouan, P. .-Y. (2018) Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature. Applied Surface Science, 454 148–156.
Added by: Richard Baschera (2018-07-24 14:20:58) Last edited by: Richard Baschera (2018-07-24 14:22:10) |
| Type de référence: Article DOI: 10.1016/j.apsusc.2018.05.061 Clé BibTeX: Keraudy2018 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM Créateurs: Boyd, Helmersson, Jouan, Keraudy, Shimizu Collection: Applied Surface Science |
Consultations : 1/386
Indice de consultation : 4% Indice de popularité : 1% |
| Résumé |
|
The precise control of the growth nanostructured thin films at low temperature is critical for the continued development of microelectronic enabled devices. In this study, nanocomposite Ni-Si-N thin films were deposited at low temperature by reactive high-power impulse magnetron sputtering. A composite Ni-Si target (15 at.% Si) in combination with a Ar/N-2 plasma were used to deposit films onto Si(0 01) substrates, without any additional substrate heating or any post-annealing. The films microstructure changes from a polycrystalline to nanocomposite structure when the nitrogen content exceeds 16 at.%. X-ray diffraction and (scanning) transmission electron microscopy analyses reveal that the microstructure consists of nanocrystals, NixSi (x {>} 1) 7-8 nm in size, embedded in an amorphous SiN x matrix. It is proposed that this nanostructure is formed at low temperatures due to the repeated-nucleation of NixSi nanocrystals, the growth of which is restricted by the formation of the SiNx phase. X-ray photoelectron spectroscopy revealed the trace presence of a ternary solid solution mainly induced by the diffusion of Ni into the SiNx matrix. Four-probe electrical measurements reveal all the deposited films are electrically conducing.
|